HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6417
Issued Date : 1992.11.25
Revised Date : 2002.02.18
Page No. : 1/3
HBC546
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC546 is primarily intended for use in driver stage of audio
amplifiers.
Features
•
High Breakdown Voltage: 65V
•
High DC Current Gain: 110-800 at IC=2mA VCE=5V
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCEO Collector to Emitter Voltage ...................................................................................... 65 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 100 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VBE(on)1
VBE(on)2
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE
fT
Cob
Min.
80
65
6
-
-
580
-
-
-
-
110
-
-
Typ.
-
-
-
-
-
-
-
-
700
900
-
300
-
Max.
-
-
-
15
770
700
250
600
-
-
800
4.5
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
PF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
IC=10mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE
Rank
Range
HBC546
A
110-220
B
200-450
C
420-800
HSMC Product Specification