AO3401
30V P-Channel Enhancement Mode MOSFET
(TA = 25oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS
Min.
Symbol
Typ.
Miax.
Unit
V
Parameter
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
BVDSS
RDS(on)
RDS(on)
RDS(on)
VGS(th)
IDSS
VGS = 0V, ID = -250uA
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID =-1A
VDS =VGS, ID = -250uA
VDS = -24V, VGS = 0V
VGS = ± 12V, VDS = 0V
VDS = -5V, ID = -5A
-30
42.0
64.0
80.0
-1
64.0
75.0
120.0
-1.3
mW
-0.7
7
V
uA
nA
S
-1
IGSS
± 100
Forward Transconductance
Dynamic
gfs
11
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
9.4
2
VDS = 20V, ID = 5.7A
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
nC
ns
3
Turn-On Delay Time
6.3
3.2
38.2
12
VDD = 20V, RL=20Ω
ID = 1A, VGEN = 10V
RG = 6W
Turn-On Rise Time
Turn-Off Delay Time
td(off)
tf
Turn-Off Fall Time
Input Capacitance
Ciss
Coss
Crss
954
115
77
VDS = 8V, VGS = 0V
f = 1.0 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
-2.2
-1.0
A
V
VSD
IS = 1.8A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
