FDN335N
20V N-Channel Enhancement Mode MOSFET
Source-Drain Diode Forward Voltage
10
0.20
On-Resistance vs. Gate-to-Source Voltage
r DS(on)– On-Resistance (
W
)
0.16
I S – Source Current (A)
T
J
= 150_C
0.12
I
D
= 3.6 A
0.08
T
J
= 25_C
0.04
1
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.2
14
12
10
Power (W)
8
6
4
–0.3
2
0
0
50
T
J
– Temperature (_C)
100
150
0.01
Single Pulse Power
0.1
V GS(th) Variance (V)
–0.0
I
D
= 250
mA
–0.1
T
C
= 25_C
Single Pulse
–0.2
–0.4
–50
0.10
1.00
Time (sec)
10.00
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
４
JinYu
semiconductor
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