KTC3265
TRANSISTOR (NPN)
FEATURES
1. BASE
SOT-23
High DC current gain
Complementary to KTA1298
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
Test
conditions
MIN
35
30
5
0.1
0.1
100
320
0.5
0.5
120
13
0.8
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
I
C
= 100
μ
A, I
E
=0
I
C
= 10mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=30 V, I
E
=0
V
EB
=5 V, I
C
=0
V
CE
=1V, I
C
= 100mA
I
C
=500mA, I
B
=20mA
V
CE
=1V,I
C
=10mA
V
CE
=5V, I
C
=10mA
μ
A
μ
A
f
T
C
ob
O
f=
100MHz
V
CB
=10V,I
E
=0,f=1MH
Z
CLASSIFICATION OF
Rank
Range
Marking
h
FE
Y
160-320
EY
100-200
EO
１
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semiconductor
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