欢迎访问ic37.com |
会员登录 免费注册
发布采购

KSH13007 参数 Datasheet PDF下载

KSH13007图片预览
型号: KSH13007
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 248 K
品牌: HUASHAN [ SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD ]
   
Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
KSH13007
█ HIGH VOLTAGE SWITCH MODE APPLICATION 
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃ 
P
C
——Collector
Dissipation(T
c
=25℃)…………………… 80W
V
CBO
——Collector-Base
Voltage…………………………… 700V
V
CEO
——Collector-Emitter
Voltage………………………… 400V
V
EBO
——Emitter-Base
Voltage……………………………… 9V
I
C
——Collector
Current(DC)……………………………… 8A
I
C
——Collector
Current(Pulse)…………………………… 16A
I
B
——Base
Current……………………………………………4A
TO-220
1―
Base,B
2―Collector,C
3―Emitter, E
█ 电参数
(T
a
=25℃)
Symbol
 
Characteristics
 
Collector-Emitter Sustaining Voltage
Emitter-Base Cutoff Current
 
Min
 
Typ
 
Max
 
Unit
 
Test Conditions
 
BV
CEO
I
EBO
 
H
FE(1)
 
H
FE(2)
400 
 
10 
5 
 
 
 
 
 
 
 
 
 
 
 
 
110 
 
 
 
 
��
1 
40 
30 
1 
2 
3 
1.2 
1.6 
 
 
1.6 
3 
0.7 
V 
�½�A 
 
 
V 
V 
V 
V 
V 
�½�F 
 
�½�S 
�½�S 
�½�S 
I
C
=10mA, I
B
=0 
V
EB
=9V, I
C
=0 
V
CE
=5V, I
C
=2A 
V
CE
=5V, I
C
=5A
I
C
=2A, I
B
=400mA 
I
C
=5A, I
B
=1A
I
C
=8A, I
B
=2A
I
C
=2A, I
B
=0.4A 
I
C
=5A, I
B
=1A 
V
CB
=10V, f=0.1MHz z
V
CE
=10V, I
C
=500mA
 
Vcc=125V,Ic=5A
I
B1
=I
B2
=1A
DC Current Gain 
V
CE(sat1)
 
Collector- Emitter Saturation Voltage 
V
CE(sat2)
V
CE(sat3)
V
BE(
sat1
)
 
V
BE(
sat2
)
Cob
f
T
 
t
ON
t
STG
t
F
Output Capacitance
Current Gain-Bandwidth Product 
Turn On time
Storage Time
Fall Time
Base- Emitter Saturation Voltage 
 
 
 
4 
 
 
 
h
FE
Classification
H1
10—16
H2
14—21
H3
19—26
H4
24—31
H5
29—40