Preliminary Data Sheet
ICE10N65FP
Product Summary
ICE10N65FP N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS ID=250uA
TA=25oC
9.5A
650V
0.35
Max
Min
Typ
Typ
rDS(on)
Qg
VGS=10V
HFALROEGEEN
VDS=480V
41nC
Features
• Low rDS(on)
• Ultra Low Gate Charge
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
T0220 Full-PAK
Isolated (T0-220)
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
1=Gate, 2=Drain,
3=Source
Maximum ratings b
, at Tj=25°C, unless otherwise specified
Parameter
Symbol
ID
Conditions
Tc=25oC
Value
Unit
A
Continuous drain current
9.5
28.5
340
5
Pulsed drain current
Tc=25oC
A
ID, pulse
E AS
I AR
ID=8.3A
Avalanche energy, single pulse
Avalanche current, repetitive
mJ
A
limited by Tjmax
VDS=480V, ID=9.5A,
Tj=125oC
V/ns
V
MOSFET dv/dt ruggedness
dv/dt
50
static
20
30
±
Gate source voltage
VGS
AC (f>1Hz)
Tc=25°C
±
W
°C
Power dissipation
Ptot
35
Operating and storage temperature
Mounting torque
Tj, Tstg
-55 to +150
50
Ncm
M 2.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-10N65FP-000-3b
06/05/2013
1
ICEMOS [ Icemos Technology ]
