Preliminary Data Sheet
ICE10N65
Product Summary
ICE10N65 N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS ID=250uA
TA=25oC
9.5A
650V
0.35
Max
Min
Typ
Typ
rDS(on)
Qg
VGS=10V
HFALROEGEEN
VDS=480V
41nC
Features
• Low rDS(on)
• Ultra Low Gate Charge
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
G
S
T0220
Standard Metal
Heatsink
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
1=Gate, 2=Drain,
3=Source.
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
, at Tj=25oC, unless otherwise specified
Maximum ratings b
Parameter
Symbol
Conditions
Value
9.5
Unit
A
Tc=25oC
Continuous drain current
ID
ID, pulse
E AS
I AR
Pulsed drain current
Tc=25oC
28.5
340
5
A
ID=8.3A
Avalanche energy, single pulse
Avalanche current, repetitive
mJ
A
limited by Tjmax
VDS=480V, ID=9.5A,
Tj=125oC
V/ns
V
MOSFET dv/dt ruggedness
dv/dt
50
static
20
30
±
Gate source voltage
VGS
AC (f>1Hz)
Tc=25oC
±
W
Power dissipation
Ptot
95
oC
Operating and storage temperature
Mounting torque
Tj, Tstg
-55 to +150
60
Ncm
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-10N65-000-3b
06/05/2013
1
ICEMOS [ Icemos Technology ]
