Preliminary Data Sheet
ICE20N170U
Product Summary
ICE20N170U N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS ID=250uA
TA=25oC
20A
600V
0.17Ω
62nC
Max
Min
Typ
Typ
rDS(on)
Qg
VGS=10V
VDS=480V
Features
• Low rDS(on)
• Ultra Low Gate Charge
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
G
S
T0262
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
Standard Metal
Heatsink
1=Gate, 2&4=Drain,
3=Source.
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
, at Tj=25oC, unless otherwise specified
Maximum ratings b
Parameter
Symbol
Conditions
Value
20
Unit
A
Tc=25oC
Continuous drain current
ID
ID, pulse
E AS
I AR
Pulsed drain current
Tc=25oC
62
A
ID=10A
Avalanche energy, single pulse
Avalanche current, repetitive
520
20
mJ
A
limited by Tjmax
VDS=480V, ID=20A,
Tj=125oC
V/ns
V
MOSFET dv/dt ruggedness
dv/dt
50
Static
20
30
±
±
Gate source voltage
VGS
AC (f>1Hz)
Tc=25oC
W
oC
Power dissipation
Ptot
208
-55 to +150
Operating and storage temperature
a When mounted on 1inch square 2oz copper clad FR-4
Tj, Tstg
b Preliminary Data Sheet – Specifications subject to change
SP-20N170U-000-2
05/15/2013
1
ICEMOS [ Icemos Technology ]
