Preliminary Data Sheet
ICE30N080W
Product Summary
ICE30N080W N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS
rDS(on)
Qg
TA=25oC
ID=1mA
43A
Max
Min
Typ
Typ
300V
VGS=10V 0.063Ω
VDS=240V 187nC
HFALROEGEEN
Features
• TO247 package
• Low rDS(on)
D
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
G
S
TO247
1:G, 2:D,
3:S, 4:D,
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
(TO-247)
o
Maximum ratings b
, at Tj=25 C, unless otherwise specified
Parameter
Symbol
ID
Conditions
Tc=25oC
Value
43
Unit
A
Continuous drain current
ID, pulse
E AS
I AR
Pulsed drain current
Tc=25oC
129
A
ID=21.5A
Avalanche energy, single pulse
Avalanche current, repetitive
1200
21.5
mJ
A
limited by Tjmax
V/ns
V
MOSFET dv/dt ruggedness
dv/dt
ID=43A, Tj=125oC
50
Static
20
30
±
±
Gate source voltage
VGS
AC (f>1Hz)
Tc=25oC
W
oC
Power dissipation
Ptot
417
-55 to +150
60
Operating and storage temperature
Mounting torque
Tj, Tstg
Ncm
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-30N080W-000-0
10/17/2013
1
ICEMOS [ Icemos Technology ]
