Preliminary Data Sheet
ICE60N130
Product Summary
ICE60N130 N-Channel
Enhancement Mode MOSFET
ID
BVDSS @Tjmax ID=250uA 650V
rDS(on)
Qg
TA=25oC 23A
Max
Min
VGS=10V 0.13Ω Typ
VDS=480V 82nC Typ
HFALROEGEEN
Features
• Low rDS(on)
• Ultra Low Gate Charge
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Optimized design for hard switching SMPS topologies
G
S
T0220
Standard Metal
Heatsink
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
1=Gate, 2=Drain,
3=Source.
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
, at Tj=25oC, unless otherwise specified
Maximum ratings b
Parameter
Symbol
Conditions
Value
23
Unit
A
Tc=25oC
Continuous drain current
ID
ID, pulse
E AS
I AR
Pulsed drain current
Tc=25oC
82
A
ID=11.5A
Avalanche energy, single pulse
Avalanche current, repetitive
690
11.5
mJ
A
limited by Tjmax
VDS=480V, ID=23A,
Tj=125oC
V/ns
V
MOSFET dv/dt ruggedness
dv/dt
50.0
Static
20
30
±
±
Gate source voltage
VGS
AC (f>1Hz)
Tc=25oC
W
Power dissipation
Ptot
208
oC
Operating and storage temperature
Mounting torque
Tj, Tstg
-55 to +150
60
Ncm
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-60N130-000-3
05/15/2013
1
ICEMOS [ Icemos Technology ]
