IDT7134SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(LA Version Only) V
LC
= 0.2V, V
HC
= V
CC
- 0.2V
Symbol
V
DR
I
CCDR
t
CDR(3)
t
R(3)
Parameter
VCC for Data Retention
Data Retention Current
Test Condition
V
CC
= 2V
Min.
2.0
MIL.
COM’L.
—
—
0
t
RC(2)
Typ.
(1)
—
100
100
—
—
Max.
—
4000
1500
—
—
ns
ns
2720 tbl 07
Unit
V
µA
CE
≥
V
HC
V
IN
≥
V
HC
or < V
LC
Chip Deselect to Data Retention Time
Operation Recovery Time
NOTES:
1. V
CC
= 2V, T
A
= +25°C, and are not production tested.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but not production tested.
DATA RETENTION WAVEFORM
DATA RETENTION MODE
V
CC
4.5V
t
CDR
V
DR
≥
2V
V
DR
4.5V
t
R
V
IH
2720 drw 05
CE
V
IH
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
Figures 1 and 2
2720 tbl 08
+5V
1250Ω
DATA
OUT
775Ω
30pF *
2720 drw 06
+5V
1250Ω
DATA
OUT
775Ω
5pF *
2720 drw 07
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(for t
LZ
, t
HZ
, t
WZ
, t
OW
)
*Including scope and jig
6.04
4
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
