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IN74HCT139AD 参数 Datasheet PDF下载

IN74HCT139AD图片预览
型号: IN74HCT139AD
PDF下载: 下载PDF文件 查看货源
内容描述: 双1 -OF- 4解码器/多路解复用器高性能硅栅CMOS [Dual 1-of-4 Decoder/Demultiplexer High-Performance Silicon-Gate CMOS]
分类和应用: 解码器解复用器
文件页数/大小: 6 页 / 269 K
品牌: IKSEMICON [ IK SEMICON CO., LTD ]
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IN74HCT139A  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
-0.5 to +7.0  
-1.5 to VCC +1.5  
-0.5 to VCC +0.5  
±20  
Unit  
V
VCC  
VIN  
VOUT  
IIN  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
V
V
mA  
mA  
mA  
mW  
IOUT  
ICC  
DC Output Current, per Pin  
±25  
DC Supply Current, VCC and GND Pins  
±50  
PD  
Power Dissipation in Still Air, Plastic DIP+  
SOIC Package+  
750  
500  
Tstg  
TL  
Storage Temperature  
-65 to +150  
260  
°C  
°C  
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP or SOIC Package)  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C  
SOIC Package: : - 7 mW/°C from 65° to 125°C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
VCC  
Parameter  
Min  
4.5  
0
Max  
5.5  
Unit  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
Input Rise and Fall Time (Figure 1)  
VIN, VOUT  
TA  
VCC  
+125  
500  
V
-55  
0
°C  
ns  
tr, tf  
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.  
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this  
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or  
V
OUT)VCC.  
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused  
outputs must be left open.  
Rev. 00