2N7002DW
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
2)
Values
typ.
max.
Unit
R
thJA
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
= 0 V,
I
D
=250 µA
V
GS(th)
I
D (off)
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=60 V,
V
GS
=-10 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=0.25 A
V
GS
=10 V,
I
D
=0.5 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=0.24 A
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
60
1.5
-
-
2.1
-
-
2.5
0.1
V
µA
-
-
5
-
-
-
0.2
1
2.0
1.6
0.36
10
4
3
-
nA
Ω
S
2)
Perfomed on a 40x40mm
2
FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm
long.
Rev.2.2
page 2
2011-06-16