HITFET
BTS3408G
Electrical Characteristics
(cont’d)
V
S
= 4.5 to 18V;
T
j
= -40 to 150°C; unless otherwise specified
Parameter
Input ’High’ voltage
IN1, IN2:
ENA:
Input voltage hysteresis
Input pull down current
IN1, IN2:
ENA:
Digital Output (FAULT)
Output ’Low’ voltage
Diagnostic Functions
Open load / short to ground
detection voltage
Fault filter time for open load
Protection Functions
3)
Thermal overload trip
temperature
Thermal hysteresis
T
jt
150
–
165
10
180
–
°C
Κ
mJ
800
550
240
240
–
–
Sym-
bol
Limit Values
min. typ.
–
–
300
50
50
max.
V
–
–
–
–
100
100
mV –
µA
–
Unit Test Conditions
V
INH
2.0
V
ENAH
2.0
V
INhys
–
I
INPD
20
I
ENAPD
20
V
FLTL
–
–
0.4
V
I
FLTL
=1.6mA,
V
DS(OL)
0.5*V
S
0.7*V
S
0.9*V
S
V
t
filter(OL)
30
100
200
µs
–
V
S
=5V
∆
T
jt
Unclamped single pulse inductive
E
AS
energy
one channel active,T
j(start)
=25°C
both channel active,T
j(start)
=25°C
one channel active,T
j(start)
=150°C
both channel active,T
j(start)
=150°C
1)
2)
3)
I
D
=0.7 A
See also diagram 4 on page 14.
See also diagram 5 on page 14.
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Datasheet Rev. 1.3
8
2008-01-09
INFINEON [ INFINEON TECHNOLOGIES AG ]
