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SDT10S60 参数 Datasheet PDF下载

SDT10S60图片预览
型号: SDT10S60
PDF下载: 下载PDF文件 查看货源
内容描述: 碳化硅肖特基二极管 [Silicon Carbide Schottky Diode]
分类和应用: 肖特基二极管
文件页数/大小: 8 页 / 208 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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SDT10S60
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
thinQ! SiC Schottky Diode
Product Summary
V
RRM
Q
c
I
F
600
29
10
P-TO220-2-2.
V
nC
A
Type
SDT10S60
Package
P-TO220-2-2.
Ordering Code
Q67040S4643
Marking
D10S60
Pin 1
Pin 2
C
A
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Symbol
Parameter
Continuous forward current,
T
C
=100°C
RMS forward current,
f=50Hz
T
C
=25°C,
t
p
=10ms
Value
10
14.1
31
39
100
4.8
600
600
75
-55... +175
Unit
A
I
F
I
FRMS
Surge non repetitive forward current, sine halfwave
I
FSM
Repetitive peak forward current
T
j
=150°C,
T
C
=100°C,
D=0.1
I
FRM
I
FMAX
∫i
2
dt
V
RRM
V
RSM
P
tot
T
j ,
T
stg
Non repetitive peak forward current
t
p
=10µs,
T
C
=25°C
i
2
t
value,
T
C
=25°C,
t
p
=10ms
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation,
T
C
=25°C
Operating and storage temperature
A²s
V
W
°C
Rev. 2.0
Page 1
2004-03-18