GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
SFH 400
SFH 401
SFH 402
2.54mm
spacing
ø0.45
ø4.8
ø4.6
1
0.9 .1
GEO06314
Chip position (2.7)
Cathode (SFH 480)
Anode (SFH 216, SFH 231,
SFH 400)
Radiant
Sensitive area
5.3
14.5
5.0
12.5
7.4
6.6
Approx. weight 0.5 g
ø5.6
ø5.3
ø0.45
(2.7)
Chip position
Anode = SFH 481
Cathode = SFH 401
(package)
1.1 .9
0
2.54 mm
spacing
welded
14.5
12.5
Approx. weight 0.35 g
Chip position (2.7)
ø0.45
5.5
5.0
14.5
12.5
5.3
5.0
ø5.6
ø5.3
GET06013
Cathode (SFH 402, BPX 65)
Anode (SFH 482)
Approx. weight 0.5 g
2.54
spacing
ø4.8
ø4.6
Radiant sensitive area
1.1 .9
0
1
0.9 .1
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Semiconductor Group
1
1998-04-16
fet06092
fet06091
5.3
5.0
6.4
5.6
ø4.8
ø4.6
1
0.9 .1
ø5.6
ø5.3
GET06091
glass
lens
fet06090
1.1 .9
0
INFINEON [ INFINEON TECHNOLOGIES AG ]
