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SFH6941 参数 Datasheet PDF下载

SFH6941图片预览
型号: SFH6941
PDF下载: 下载PDF文件 查看货源
内容描述: 低电流输入MINI光电耦合器 [LOW CURRENT INPUT MINI OPTOCOUPLER]
分类和应用: 光电输出元件输入元件
文件页数/大小: 3 页 / 37 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
 浏览型号SFH6941的Datasheet PDF文件第2页浏览型号SFH6941的Datasheet PDF文件第3页  
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SFH6941
LOW CURRENT INPUT
MINI OPTOCOUPLER
Preliminary Data Sheet
FEATURES
• Transistor Optocoupler in SOT223 Package
• End Stackable, 1.27 mm Spacing
• Low Current Input
• Very High CTR, 150% Typical at I
F
=1 mA,
V
CE
=0.5V
• Good CTR Linearity Versus Forward Current
• Minor CTR Degradation
• Field Effect Stable by TRIOS
®
(TRansparent IOn Shield)
• High Collector-Emitter Voltage, V
CEO
=70 V
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Isolation Test Voltage: 2500 VDC
APPLICATIONS
• Telecommunication
• SMT
• PCMCIA
• Instrumentation
DESCRIPTION
The SFH6941 is a four channel mini-optocoupler suit-
able for high density packaged PCB application. It
has a minimum of 2500 VDC isolation from input to
output. The device consists of four phototransistors as
detectors. Each channel is individually controlled. The
optocoupler is housed in a SOT223 package. All the
cathodes of the input LEDs and all the collectors of
the output transistors are commoned enabling a pin
count reduction from 16 pins to 10 pins—a significant
space savings as compared to four channels that are
electrically isolated individually.
N
Package Dimensions in Inches (mm)
Anode 1 1
Anode 2 2
Common
Cathode
3
10 Emitter 1
9 Emitter 2
8 Common
Collector
7 Emitter 3
6 Emitter 4
.256
±.008
(6.5
±.2)
Anode 3 4
Anode 4 5
.287 (7.3)
.264 (6.6)
.145 (3.7)
.130 (3.3)
10°
typ.
.013 (.24)
.009 (.32)
.067 (1.7)
.059 (1.5)
15° max.
.020 (.5) min.
+.004
.016
–.002
(+.1)
(.4)
(–.05)
.050
(1.27)
.043
±.020
(1.1
±.5)
Absolute Maximum Ratings
Emitter(GaAlAs)
Reverse Voltage .................................................................................. 3 V
DC Forward Current ......................................................................... 5 mA
Surge Forward Current (t
P
10
µ
s) ................................................ 100 mA
Total Power Dissipation ..................................................................10 mW
Detector (Si Phototransistor)
Collector-Emitter Voltage .................................................................. 70 V
Emitter-Collector Voltage ..................................................................... 7 V
Collector Current ............................................................................ 10 mA
Surge Collector Current (t
P
<1 ms) ................................................. 20 mA
Total Power Dissipation ..................................................................20 mW
Package Insulation
Isolation Test Voltage (between emitter and detector,
refer to climate DIN 40046, part 2, Nov. 74) ......................... 2500 VDC
Creepage
.................................................................................................≥
4 mm
Clearance
.................................................................................................≥
4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1 ...................................................175
Isolation Resistance
V
IO
=100 V, T
A
=25
°
C..................................................................
10
11
V
IO
=100 V, T
A
=100
°
C................................................................
10
10
Storage Temperature Range ............................................. –55 to +150
°
C
Ambient Temperature Range............................................. –55 to +100
°
C
Junction Temperature ......................................................................100
°
C
Soldering Temperature (t=10 sec. max.)........................................260
°
C
Dip soldering plus reflow soldering processes
5–282