SGP06N60,
SGD06N60,
Fast IGBT in NPT-technology
•
75% lower
E
off
compared to previous generation
combined with low conduction losses
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
•
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
SGB06N60
SGU06N60
C
G
E
P-TO-251-3-1 (I-PAK)
(TO-251AA)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
•
Complete product spectrum and PSpice Models :
Type
SGP06N60
SGB06N60
SGD06N60
SGU06N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 6 A,
V
CC
= 50 V,
R
GE
= 25
Ω,
start at
T
j
= 25°C
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
T
j
,
T
stg
-55...+150
°C
1)
V
CE
600V
I
C
6A
V
CE(sat)
2.3V
T
j
150°C
Package
TO-220AB
TO-263AB
TO-252AA(DPAK)
TO-251AA(IPAK)
Ordering Code
Q67040-S4450
Q67040-S4448
Q67041-A4709
Q67040-S4449
Symbol
V
CE
I
C
Value
600
12
6.9
Unit
V
A
I
Cpul s
-
V
GE
E
AS
24
24
±20
34
V
mJ
t
SC
P
tot
10
68
µs
W
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
INFINEON [ INFINEON TECHNOLOGIES AG ]
