SPA06N60C3
CoolMOS
Features
TM
Power Transistor
Product Summary
V
DS
@
T
j,max
R
DS(on),max
I
D1)
650
0.75
6.2
V
Ω
A
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• High peak current capability
• Ultra low effective capacitances
• Extreme dv /dt rated
• Improved transconductance
• Fully isolated package (2500 V AC; 1 minute)
P-TO220-3-31
Type
SPA06N60C3
Package
P-TO220-3-31
Ordering Code
Q67040-S4631
Marking
06N60C3
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
1)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR1),2)
Avalanche current, repetitive
t
AR1)
Drain source voltage slope
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
GS
Power dissipation
Operating and storage temperature
P
tot
T
j
,
T
stg
I
D
=6.2 A,
V
DS
=480 V,
T
j
=125 °C
static
AC (f >1 Hz)
T
C
=25 °C
T
C
=25 °C
I
D
=3.1 A,
V
DD
=50 V
I
D
=6.2 A,
V
DD
=50 V
Value
6.2
3.9
18.6
200
0.5
6.2
50
±20
±30
32
-55 ... 150
W
°C
A
V/ns
V
mJ
Unit
A
Rev. 1.0
page 1
2004-04-27
INFINEON [ INFINEON TECHNOLOGIES AG ]
