Preliminary data
SPI35N10
SPP35N10,SPB35N10
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
P-TO262-3-1
P-TO263-3-2
Product Summary
V
DS
R
DS(on)
I
D
100
44
35
P-TO220-3-1
V
A
Type
SPP35N10
SPB35N10
SPI35N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4123
Q67042-S4103
Q67042-S4124
Marking
35N10
35N10
35N10
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25°C
T
C
=100°C
Symbol
I
D
Value
35
26.4
Unit
A
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
140
245
6
±20
150
-55... +175
55/175/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
Reverse diode dv/dt
Gate source voltage
Power dissipation
T
C
=25°C
I
S
=35A,
V
DS
=80V,
di/dt=200A/µs,
T
jmax
=175°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D
=35 A ,
V
DD
=25V,
R
GS
=25
Page 1
2002-01-31
m