SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
OptiMOS
®
Power-Transistor
Feature
•
N-Channel
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
P- TO262 -3-1
P- TO263 -3-2
30
5.9
80
P- TO220 -3-1
V
mΩ
A
•
Enhancement mode
•
Logic Level
•
Low On-Resistance
R
DS(on)
•
Excellent Gate Charge x
R
DS(on)
product (FOM)
•
Superior thermal resistance
•
175°C operating temperature
•
Avalanche rated
•
dv/dt rated
Type
SPP80N03S2L-06
SPB80N03S2L-06
SPI80N03S2L-06
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4088
Q67042-S4089
Q67042-S4092
Marking
2N03L06
2N03L06
2N03L06
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
1)
T
C
=25°C
Value
80
80
320
240
15
6
±20
150
-55... +175
55/175/56
Unit
A
I
D
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
Avalanche energy, single pulse
I
D
=20A,
V
DD
=25V,
R
GS
=25Ω
mJ
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode dv/dt
I
S
=80A,
V
DS
=24V,
di/dt=200A/µs,
T
jmax
=175°C
kV/µs
V
W
°C
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
INFINEON [ INFINEON TECHNOLOGIES AG ]
