SPI10N10L
SPP10N10L
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
175°C operating temperature
Avalanche rated
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
PG-TO262-3-1
100
154
10.3
V
A
PG-TO220-3-1
Type
SPP10N10L
SPI10N10L
Package
PG-TO220-3-1
PG-TO262-3-1
Ordering Code
Q67042-S4163
Q67042-S4162
Marking
10N10L
10N10L
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25°C
T
C
=100°C
Symbol
I
D
Value
10.3
8.1
Unit
A
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
42.2
60
6
±20
50
-55... +175
55/175/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
Reverse diode dv/dt
Gate source voltage
Power dissipation
T
C
=25°C
I
S
=10.3A,
V
DS
=80V,
di/dt=200A/µs,
T
jmax
=175°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 2.1
I
D
=10.3 A ,
V
DD
=25V,
R
GS
=25
Page 1
2005-02-14
m
INFINEON [ INFINEON TECHNOLOGIES AG ]
