欢迎访问ic37.com |
会员登录 免费注册
发布采购

IN74HC03AD 参数 Datasheet PDF下载

IN74HC03AD图片预览
型号: IN74HC03AD
PDF下载: 下载PDF文件 查看货源
内容描述: 四2输入与非门与漏极开路输出高性能硅栅CMOS [Quad 2-Input NAND Gate with Open-Drain Outputs High-Performance Silicon-Gate CMOS]
分类和应用:
文件页数/大小: 5 页 / 227 K
品牌: INTEGRAL [ INTEGRAL CORP. ]
 浏览型号IN74HC03AD的Datasheet PDF文件第1页浏览型号IN74HC03AD的Datasheet PDF文件第2页浏览型号IN74HC03AD的Datasheet PDF文件第3页浏览型号IN74HC03AD的Datasheet PDF文件第5页  
IN74HC03A
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Input tr=tf=6.0 ns)
V
CC
Symbol
Parameter
V
Guaranteed Limit
25
°C
to
-55°C
120
24
20
75
15
13
10
10
≤85°C
≤125°C
Unit
t
PLZ
, t
PZL
Maximum Propagation Delay, Input A or B to
Output Y (Figures 1 and 2)
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
Maximum Input Capacitance
Maximum Three-State Output Capacitance
(Output in High-Impedance State)
Power Dissipation Capacitance (Per Gate)
Used to determine the no-load dynamic power
consumption:
P
D
=C
PD
V
CC2
f+I
CC
V
CC
2.0
4.5
6.0
2.0
4.5
6.0
-
-
150
30
26
95
19
16
10
10
180
36
31
110
22
19
10
10
ns
t
THL
ns
C
IN
C
OUT
pF
pF
Typical @25°C,V
CC
=5.0 V
8.0
pF
C
PD
.Figure 1. Switching Waveforms
Figure 2. Test Circuit
EXPANDED LOGIC DIAGRAM
(1/4 of the Device)
*
Denotes open-drain outputs
4