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RD28F1602C3B110 参数 Datasheet PDF下载

RD28F1602C3B110图片预览
型号: RD28F1602C3B110
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT英特尔?高级+引导?座闪存?记忆? ( C3) ?堆叠芯片? ScalPackage ? Familye [3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 70 页 / 1167 K
品牌: INTEL [ INTEL ]
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3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family  
4.0  
Power and Reset Considerations  
4.1  
Power-Up/Down Characteristics  
In order to prevent any condition that may result in a spurious write or erase operation, it is  
recommended to power-up F-VCC, F-VCCQ and S-VCC together. Conversely, F-VCC, F-VCCQ and  
S-VCC must power-down together. It is also recommended to power-up F-VPP with or slightly after  
F-VCC. Conversely, F-VPP must power down with or slightly before F-VCC.  
If F-VCCQ and/or F-VPP are not connected to the F-VCC supply, then F-VCC should attain F-  
VCCMin before applying F-VCCQ and F-VPP. Device inputs should not be driven before supply  
voltage = F-VCCMin. Power supply transitions should only occur when F-RP# is low.  
4.2  
Additional Flash Features  
Intel 3 Volt Advanced+ Stacked-CSP products provide in-system programming and erase in the  
1.65 V–3.3 V range. For fast production programming, it also includes a low-cost, backward-  
compatible 12 V programming feature.  
4.2.1  
Improved 12 Volt Production Programming  
When F-VPP is between 1.65 V and 3.3 V, all program and erase current is drawn through the  
F-VCC signal. Note that if F-VPP is driven by a logic signal, VIH min = 1.65 V. That is, F-VPP must  
remain above 1.65 V to perform in-system flash modifications. When F-VPP is connected to a 12 V  
power supply, the device draws program and erase current directly from the F-VPP signal. This  
eliminates the need for an external switching transistor to control the voltage F-VPP. Figure 12,  
“Example Power Supply Configurations” on page 42 shows examples of how the flash power  
supplies can be configured for various usage models.  
The 12 V F-VPP mode enhances programming performance during the short period of time  
typically found in manufacturing processes; however, it is not intended for extended use. 12 V may  
be applied to F-VPP during program and erase operations for a maximum of 1000 cycles on the  
main blocks and 2500 cycles on the parameter blocks. F-VPP may be connected to 12 V for a total  
of 80 hours maximum. Stressing the device beyond these limits may cause permanent damage.  
4.2.2  
F-VPP VPPLK for Complete Protection  
In addition to the flexible block locking, the F-VPP programming voltage can be held low for  
absolute hardware write protection of all blocks in the flash device. When F-VPP is below VPPLK  
,
any program or erase operation will result in a error, prompting the corresponding status register bit  
(SR.3) to be set.  
Datasheet  
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