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RD38F1010C0ZBL0 参数 Datasheet PDF下载

RD38F1010C0ZBL0图片预览
型号: RD38F1010C0ZBL0
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT英特尔?高级+引导?座闪存?记忆? ( C3) ?堆叠芯片? ScalPackage ? Familye [3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye]
分类和应用: 闪存
文件页数/大小: 70 页 / 1167 K
品牌: INTEL [ INTEL CORPORATION ]
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3 Volt Intel
®
Advanced+ Boot Block
Flash Memory (C3) Stacked-Chip Scale
Package Family
Datasheet
Product Features
Flash Memory Plus SRAM
— Reduces Memory Board Space
Required, Simplifying PCB Design
Complexity
Stacked-Chip Scale Package (Stacked-
CSP) Technology
— Smallest Memory Subsystem Footprint
— Area : 8 x 10 mm for 16Mbit (0.13 µm)
Flash + 2Mbit or 4Mbit SRAM
— Area : 8 x 12 mm for 32Mbit (0.13 µm)
Flash + 4Mbit or 8Mbit SRAM
— Height : 1.20 mm for 16Mbit (0.13 µm)
Flash + 2Mbit or 4Mbit SRAM and
32Mbit (0.13um) Flash + 8Mbit SRAM
— Height : 1.40 mm for 32Mbit (0.13 µm)
Flash + 4Mbit SRAM
— This Family also includes 0.25 µm and
0.18 µm technologies
Advanced SRAM Technology
— 70 ns Access Time
— Low Power Operation
— Low Voltage Data Retention Mode
Intel
®
Flash Data Integrator (FDI)
Software
— Real-Time Data Storage and Code
Execution in the Same Memory Device
— Full Flash File Manager Capability
Advanced+ Boot Block Flash Memory
— 70 ns Access Time at 2.7 V
— Instant, Individual Block Locking
— 128 bit Protection Register
— 12 V Production Programming
— Ultra Fast Program and Erase Suspend
— Extended Temperature –25 °C to +85 °C
Blocking Architecture
— Block Sizes for Code + Data Storage
— 4-Kword Parameter Blocks (for data)
— 64-Kbyte Main Blocks (for code)
— 100,000 Erase Cycles per Block
Low Power Operation
— Async Read Current: 9 mA (Flash)
— Standby Current: 7 µA (Flash)
— Automatic Power Saving Mode
Flash Technologies
— 0.25 µm ETOX™ VI, 0.18 µm ETOX™
VII and 0.13 µm ETOX™ VIII Flash
Technologies
— 28F160xC3, 28F320xC3
The 3 Volt Intel
®
Advanced+ Boot Block Flash Memory (C3) Stacked-Chip Scale Package
(Stacked-CSP) device delivers a feature-rich solution for low-power applications. The C3
Stacked-CSP memory device incorporates flash memory and static RAM in one package with
low voltage capability to achieve the smallest system memory solution form-factor together with
high-speed, low-power operations. The C3 Stacked-CSP memory device offers a protection
register and flexible block locking to enable next generation security capability. Combined with
the Intel
®
Flash Data Integrator (Intel
®
FDI) software, the C3 Stacked-CSP memory device
provides a cost-effective, flexible, code plus data storage solution.
Notice:
This document contains information on new products in production. The specifications
are subject to change without notice. Verify with your local Intel sales office that you have the lat-
est datasheet before finalizing a design.
252636-001
February, 2003