2N6796
Data Sheet
November 1998
File Number
1594.2
8A, 100V, 0.180 Ohm, N-Channel Power
MOSFET
The 2N6796 is an N-Channel enhancement mode silicon
gate power field effect transistor designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate drive
power. This type can be operated directly from integrated
circuits.
Features
• 8A, 100V
• r
DS(ON)
= 0.180Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Ordering Information
PART NUMBER
2N6796
PACKAGE
TO-205AF
BRAND
2N6796
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
