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5962F9562601VYC 参数 Datasheet PDF下载

5962F9562601VYC图片预览
型号: 5962F9562601VYC
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射8K ×8 CMOS PROM [Radiation Hardened 8K x 8 CMOS PROM]
分类和应用: 可编程只读存储器
文件页数/大小: 5 页 / 136 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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HS-6664RH
Burn-In Circuits
HS1-6664RH 28 LEAD (8K X 8 PROM DIP)
HS9-6664RH 28 LEAD (8K X 8 PROM FLATPACK)
VDD
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
NC
NC
NC
DQ0
DQ1
DQ2
VSS
VDD
P
NC
A8
A9
A11
G
A10
E1
DQ7
DQ6
DQ5
DQ4
DQ3
NC
NC
NC
NC
NC
NC
F13
F8
F7
F6
F5
F4
F3
F2
F1
LOAD
LOAD
LOAD
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VDD
P
NC
A8
A9
A11
G
A10
E1
DQ7
DQ6
DQ5
DQ4
DQ3
LOAD
LOAD
LOAD
LOAD
LOAD
NC
F9
F10
F12
F0
F11
F0
HS1-6664RH 28 LEAD (8K X 8 PROM DIP)
HS9-6664RH 28 LEAD (8K X 8 PROM FLATPACK)
VDD
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
LOAD:
10kΩ
OUT
V
SS
= GND
V
SS
= GND
VDD/2
STATIC CONFIGURATION
NOTES:
1. Power Supply: VDD = 5.5V (Min)
2. Resistors = 10kΩ
±
10%
NOTES:
DYNAMIC CONFIGURATION
3. Power Supply: VDD = 5.5V (Min)
4. VIH = VDD to VDD-1.0V
5. VIL = 0.0V to 0.8V
6. Resistors = 10kΩ
±
10%
7. F0 = 100KHz
±
10%, 50% Duty Cycle
8. F1 = F0/2; F2 = F1/2; F3 = F2/2; F4 = F3/2; F5 = F4/2; . . .
F13 = F12/2
Irradiation Circuit
HS1-6664RH 28 LEAD (8K X 8 PROM DIP)
VDD
NC
NC
1
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
DQ0
11
DQ1
12
DQ2
13
VSS
14
VDD
P
NC
A8
A9
A11
G
A10
E1
DQ7
DQ6
DQ5
DQ4
DQ3
NC
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VDD = GND
NOTES:
9. Power Supply: VDD = 5.5V
±0.5V
10. All Resistors = 47kΩ
±
10%
3