CA3127
Absolute Maximum Ratings
The following ratings apply for each transistor in the device
Collector-to-Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, V
CIO
(Note 1). . . . . . . . . . . . . 20V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Thermal Information
Thermal Resistance (Typical, Note 2)
θ
JA
(
o
C/W)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175
Maximum Power Dissipation, P
D
(Any One Transistor). . . . . . 85mW
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175
o
C
Maximum Junction Temperature (Plastic Packages). . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be con-
nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
T
A
= 25
o
C
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS
(For Each Transistor)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown-Voltage
Emitter-to-Base Breakdown Voltage (Note 3)
Collector-Cutoff-Current
Collector-Cutoff-Current
DC Forward-Current Transfer Ratio
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C1
= 10µA, I
B
= 0, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V I
B
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 6V
I
C
= 5mA
I
C
= 1mA
I
C
= 0.1mA
Base-to-Emitter Voltage
V
CE
= 6V
I
C
= 5mA
I
C
= 1mA
I
C
= 0.1mA
Collector-to-Emitter Saturation Voltage
Magnitude of Difference in V
BE
Magnitude of Difference in I
B
DYNAMIC CHARACTERISTICS
Noise Figure
Gain-Bandwidth Product
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
Emitter-to-Base Capacitance
Voltage Gain
Power Gain
Noise Figure
Input Resistance
Output Resistance
Input Capacitance
Output Capacitance
Magnitude of Forward Transadmittance
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance
or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
f = 100kHz, R
S
= 500Ω, I
C
= 1mA
V
CE
= 6V, I
C
= 5mA
V
CB
= 6V, f = 1MHz
V
CI
= 6V, f = 1MHz
V
BE
= 4V, f = 1MHz
V
CE
= 6V, f = 10MHz, R
L
= 1kΩ, I
C
= 1mA
Cascode Configuration
f = 100MHz, V+ = 12V, I
C
= 1mA
Common-Emitter Configuration
V
CE
= 6V, I
C
= 1mA, f = 200 MHz
-
-
-
-
-
-
27
-
-
-
-
-
-
28
30
3.5
400
4.6
3.7
2
24
2.2
1.15
See
Fig. 5
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
GHz
pF
pF
pF
dB
dB
dB
Ω
kΩ
pF
pF
mS
I
C
= 10mA, I
B
= 1mA
Q
1
and Q
2
Matched
V
CE
= 6V, I
C
= 1mA
20
15
20
4
-
-
35
40
35
0.71
0.66
0.60
-
-
-
32
24
60
5.7
-
-
88
90
85
0.81
0.76
0.70
0.26
0.5
0.2
-
-
-
-
0.5
40
-
-
-
0.91
0.86
0.80
0.50
5
3
V
V
V
V
mV
µA
V
V
V
V
µA
nA
5-2
INTERSIL [ INTERSIL CORPORATION ]
