EL7530
Absolute Maximum Ratings
(T
A
= 25°C)
V
IN
, V
DD
, PG to SGND . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (V
IN
+ +0.3V)
SYNC, EN, V
O
, FB to SGND . . . . . . . . . . . . . -0.3V to (V
IN
+ +0.3V)
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Thermal Information
Thermal Resistance (Typical)
θ
JA
(°C/W)
MSOP Package (Note 1) . . . . . . . . . . . . . . . . . . . . .
115
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
NOTE:
1.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
Electrical Specifications
PARAMETER
DC CHARACTERISTICS
V
FB
I
FB
V
IN
, V
DD
V
IN,OFF
V
IN,ON
I
S
V
DD
= V
IN
= V
EN
= 3.3V, C
1
= C
2
= 10µF, L = 1.8µH, V
O
= 1.8V (as shown in Typical Application Diagram),
unless otherwise specified.
CONDITIONS
MIN
TYP
MAX
UNIT
DESCRIPTION
Feedback Input Voltage
Feedback Input Current
Input Voltage
Minimum Voltage for Shutdown
Maximum Voltage for Startup
Input Supply Quiescent Current
Active - PFM Mode
Active - PWM Mode
PWM Mode
790
800
810
100
mV
nA
V
V
V
2.5
V
IN
falling
V
IN
rising
2
2.2
5.5
2.2
2.4
V
SYNC
= 0V
V
SYNC
= 3.3V
PWM, V
IN
= V
DD
= 5V
EN = 0, V
IN
= V
DD
= 5V
120
6.5
400
0.1
70
45
1.2
145
7.5
500
1
100
75
µA
mA
µA
µA
mΩ
mΩ
A
°C
°C
I
DD
Supply Current
R
DS(ON)-PMOS
PMOS FET Resistance
V
DD
= 5V, wafer test only
V
DD
= 5V, wafer test only
R
DS(ON)-NMOS
NMOS FET Resistance
I
LMAX
T
OT,OFF
T
OT,ON
I
EN
, I
SYNC
V
EN1
, V
SYNC1
V
EN2
, V
SYNC2
V
PG
Current Limit
Over-temperature Threshold
Over-temperature Hysteresis
EN, SYNC Current
EN, SYNC Rising Threshold
EN, SYNC Falling Threshold
Minimum V
FB
for PG, WRT Targeted
V
FB
Value
PG Voltage Drop
T rising
T falling
V
EN
, V
RSI
= 0V and 3.3V
V
DD
= 3.3V
V
DD
= 3.3V
V
FB
rising
V
FB
falling
I
SINK
= 3.3mA
86
0.8
-1
145
130
1
2.4
µA
V
V
95
%
%
V
OLPG
35
70
mV
AC CHARACTERISTICS
F
PWM
t
SYNC
t
SS
PWM Switching Frequency
Minimum SYNC Pulse Width
Soft-start Time
Guaranteed by design
1.25
25
650
1.4
1.6
MHz
ns
µs
2
FN7434.6
July 12, 2006
INTERSIL [ INTERSIL CORPORATION ]
