EL7531
Absolute Maximum Ratings
(T
A
= 25°C)
V
IN
, V
DD
, PG to SGND . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (V
IN
+ +0.3V)
SYNC, EN, V
O
, FB to SGND . . . . . . . . . . . . . -0.3V to (V
IN
+ +0.3V)
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Specifications
PARAMETER
DC CHARACTERISTICS
V
FB
∆V
OUT
/V
OUT
∆V
OUT
/V
OUT
∆V
OUT
/V
OUT
I
FB
V
IN
, V
DD
V
IN,OFF
V
IN,ON
I
S
V
DD
= V
IN
= V
EN
= 3.3V, C1 = C2 = 10µF, L = 1.8µH, V
O
= 1.8V (as shown in Typical Application Diagram),
unless otherwise specified.
CONDITIONS
MIN
TYP
MAX
UNIT
DESCRIPTION
Feedback Input Voltage
V
FB
vs Temperature
Line Regulation
Load Regulation
Feedback Input Current
Input Voltage
Minimum Voltage for Shutdown
Maximum Voltage for Startup
Input Supply Quiescent Current
Active - PFM Mode
Active - PWM Mode
PWM mode
Junction temperature = -40°C to +85°C
(see Figure 7)
V
IN
= 3.3V to 5V, I
O
= 1A (see Figure 7)
I
O
= 0A to 1A, V
IN
= 3.3V (see Figure 7)
790
800
0.3
0.1
0.4
810
mV
%
%
%
100
2.5
V
IN
falling
V
IN
rising
2
2.2
5.5
2.2
2.4
nA
V
V
V
V
SYNC
= 0V
V
SYNC
= 3.3V
PWM, V
IN
= V
DD
= 5V
EN = 0, V
IN
= V
DD
= 5V
120
6.5
400
0.1
70
45
1.5
145
7.5
500
1
100
75
µA
mA
µA
µA
mΩ
mΩ
A
°C
°C
I
DD
Supply Current
R
DS(ON)-PMOS
PMOS FET Resistance
R
DS(ON)-NMOS
NMOS FET Resistance
I
LMAX
T
OT,OFF
T
OT,ON
I
EN
, I
SYNC
V
EN1
, V
SYNC1
V
EN2
, V
SYNC2
V
PG
Current Limit
Over-temperature Threshold
Over-temperature Hysteresis
EN, SYNC Current
EN, SYNC Rising Threshold
EN, SYNC Falling Threshold
Minimum V
FB
for PG, WRT Targeted
V
FB
Value
PG Voltage Drop
V
DD
= 5V, wafer test only
V
DD
= 5V, wafer test only
T rising
T falling
V
EN
, V
RSI
= 0V and 3.3V
V
DD
= 3.3V
V
DD
= 3.3V
V
FB
rising
V
FB
falling
I
SINK
= 3.3mA
86
-1
2.4
9
145
130
1
1.8
1.4
0.8
95
µA
V
V
%
%
V
OLPG
35
70
mV
AC CHARACTERISTICS
F
PWM
t
SYNC
t
SS
PWM Switching Frequency
Minimum SYNC Pulse Width
Soft-start Time
Guaranteed by design
1.25
25
650
1.4
1.6
MHz
ns
µs
2
FN7428.6
August 5, 2005
INTERSIL [ INTERSIL CORPORATION ]
