欢迎访问ic37.com |
会员登录 免费注册
发布采购

HIP6603BCB 参数 Datasheet PDF下载

HIP6603BCB图片预览
型号: HIP6603BCB
PDF下载: 下载PDF文件 查看货源
内容描述: 同步整流降压MOSFET驱动器 [Synchronous Rectified Buck MOSFET Drivers]
分类和应用: 驱动器
文件页数/大小: 11 页 / 344 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
 浏览型号HIP6603BCB的Datasheet PDF文件第2页浏览型号HIP6603BCB的Datasheet PDF文件第3页浏览型号HIP6603BCB的Datasheet PDF文件第4页浏览型号HIP6603BCB的Datasheet PDF文件第5页浏览型号HIP6603BCB的Datasheet PDF文件第6页浏览型号HIP6603BCB的Datasheet PDF文件第7页浏览型号HIP6603BCB的Datasheet PDF文件第8页浏览型号HIP6603BCB的Datasheet PDF文件第9页  
I GN S
EW DES
D FOR N
ME N D E OMME N D S :
C OM
,
NOT RE TERSIL REC
L6613A
IN
Data
L6613, IS
Sheet
12A, IS
2, ISL66 4, ISL6614A
ISL661
ISL661
®
HIP6601B, HIP6603B, HIP6604B
July 20, 2005
FN9072.7
Synchronous Rectified Buck
MOSFET Drivers
The HIP6601B, HIP6603B and HIP6604B are high-
frequency, dual MOSFET drivers specifically designed to
drive two power N-Channel MOSFETs in a synchronous
rectified buck converter topology. These drivers combined
with a HIP63xx or the ISL65xx series of Multi-Phase Buck
PWM controllers and MOSFETs form a complete core-
voltage regulator solution for advanced microprocessors.
The HIP6601B drives the lower gate in a synchronous
rectifier to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603B drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses. The HIP6604B can be configured as
either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and
HIP6604B have the capacity to efficiently switch power
MOSFETs at frequencies up to 2MHz. Each driver is
capable of driving a 3000pF load with a 30ns propagation
delay and 50ns transition time. These products implement
bootstrapping on the upper gate with only an external
capacitor required. This reduces implementation complexity
and allows the use of higher performance, cost effective,
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 LD SOIC and EPSOIC and 16 LD QFN Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Undervoltage Protection
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat
No Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
Athlon™ Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Related Literature
• Technical Brief TB363,
Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002-2005. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.