HRF3205, HRF3205S
Data Sheet
June 1999
File Number
4447.4
100A, 55V, 0.008 Ohm, N-Channel, Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
NOTE: Calculated continuous current based on maximum
allowable junction temperature. Package limited to 75A
continuous, see Figure 9.
Features
• 100A, 55V (See Note)
• Low On-Resistance, r
DS(ON)
= 0.008Ω
• Temperature Compensating PSPICE
®
Model
• Thermal Impedance SPICE Model
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HRF3205
HRF3205S
PACKAGE
TO-220AB
TO-263AB
BRAND
HRF3205
HRF3205S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
JEDEC TO-263AB
DRAIN
(FLANGE)
4-29
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
