HUF75329D3, HUF75329D3S
Data Sheet
June 1999
File Number
4426.4
20A, 55V, 0.026 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Features
• 20A, 55V
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
©
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.semi.Intersil.com/families/models.htm
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
HUF75329D3
HUF75329D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
75329D
75329D
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST.
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
76
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
