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HUF75332P3 参数 Datasheet PDF下载

HUF75332P3图片预览
型号: HUF75332P3
PDF下载: 下载PDF文件 查看货源
内容描述: 60A , 55V , 0.019 Ohm的N通道UltraFET功率MOSFET [60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 18 页 / 214 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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HUF75332G3, HUF75332P3, HUF75332S3S
Typical Performance Curves
1000
(Continued)
T
C
= 25
o
C
I
DM
, PEAK CURRENT (A)
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
V
GS
= 10V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
50
10
-5
FIGURE 4. PEAK CURRENT CAPABILITY
500
500
I
AS
, AVALANCHE CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
I
D
, DRAIN CURRENT (A)
100
100µs
100
o
STARTING T
J
TJ 2525oC
STARTING = = C
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 55V
1
1
10
1ms
STARTING T
J
= 150
o
C
10ms
100
200
10
0.001
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
150
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25
o
C
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
120
V
GS
= 20V
V
GS
= 10V
V
GS
= 7V
120
-55
o
C
90
175
o
C
90
V
GS
= 6V
60
V
GS
= 5V
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
1.5
3.0
4.5
6.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
7.5
60
30
V
DD
= 15V
0
0
1.5
3.0
4.5
6.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
7.5
0
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
97