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HUF75339S3S 参数 Datasheet PDF下载

HUF75339S3S图片预览
型号: HUF75339S3S
PDF下载: 下载PDF文件 查看货源
内容描述: 75A , 55V , 0.012 Ohm的N通道UltraFET功率MOSFET [75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs]
分类和应用: 晶体晶体管开关
文件页数/大小: 9 页 / 111 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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HUF75339G3, HUF75339P3, HUF75339S3S
PSPICE Electrical Model
.SUBCKT HUF75339 2 1 3 ;
CA 12 8 2.80e-9
CB 15 14 2.80e-9
CIN 6 8 1.77e-9
10
rev 23 February 1999
LDRAIN
DPLCAP
5
RLDRAIN
DBREAK
11
+
17
EBREAK 18
DRAIN
2
RSLC1
51
ESLC
50
RSLC2
5
51
EBREAK 11 7 17 18 59.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 2.0e-9
LSOURCE 3 7 4.7e-10
K1 LSOURCE LGATE 0.0302
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.95e-3
RGATE 9 20 0.34
RLDRAIN 2 5 10
RLGATE 1 9 20
RLSOURCE 3 7 4.7
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.0e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
S1B
S2A
S2B
6 12 13 8 S1AMOD
13 12 13 8 S1BMOD
6 15 14 13 S2AMOD
13 15 14 13 S2BMOD
GATE
1
-
ESG
+
LGATE
EVTEMP
RGATE +
18
-
22
9
20
6
8
EVTHRES
+ 19
-
8
6
RLGATE
CIN
MSTRO
LSOURCE
8
RSOURCE
RLSOURCE
7
SOURCE
3
S1A
12
S1B
CA
13
+
EGS
6
8
13
8
S2A
14
13
S2B
CB
+
EDS
5
8
14
IT
15
17
-
-
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*230),4))}
.MODEL DBODYMOD D (IS = 3.5e-12 RS = 3.02e-3 N = 1.02 XTI = 5.5 TRS1 = 3.0e-3 TRS2 = 4.0e-6 CJO = 2.9e-9 TT = 4.35e-8 M = 0.5)
.MODEL DBREAKMOD D (RS = 8.5e-2 TRS1 = 8.0e-4 TRS2 = 1.0e-7)
.MODEL DPLCAPMOD D (CJO = 2.25e-9 IS = 1e-30 M = 0.8 )
.MODEL MMEDMOD NMOS (VTO = 3.1 KP = 1.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG=0.34)
.MODEL MSTROMOD NMOS (VTO = 3.73 KP = 86.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.7 KP = 0.01 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG=3.4)
.MODEL RBREAKMOD RES (TC1 = 1.08e-3 TC2 = -2.5e-7)
.MODEL RDRAINMOD RES (TC1 = 2.05e-2 TC2 = 1.6e-5)
.MODEL RSLCMOD RES (TC1 = 6.0e-3 TC2 = -2.8e-6)
.MODEL RSOURCEMOD RES (TC1 = 5.5e-4 TC2 = 1.75e-5)
.MODEL RVTHRESMOD RES (TC1 = -3.65e-3 TC2 = -6.0e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.3e-3 TC2 = -4.0e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5
.MODEL S1BMOD VSWITCH (RON = 1e-5
.MODEL S2AMOD VSWITCH (RON = 1e-5
.MODEL S2BMOD VSWITCH (RON = 1e-5
.ENDS
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
ROFF = 0.1
VON = -9 VOFF= -5.5)
VON = -5.5 VOFF= -9)
VON = 0 VOFF= 2.1)
VON = 2.1 VOFF= 0)
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options;
IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
127
+
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
-
RDRAIN
21
16
DBODY
-
MWEAK
MMED
RBREAK
18
RVTEMP
19
-
VBAT
+
8
22
RVTHRES