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HUF75542S3S 参数 Datasheet PDF下载

HUF75542S3S图片预览
型号: HUF75542S3S
PDF下载: 下载PDF文件 查看货源
内容描述: 75A , 80V , 0.014 Ohm的N通道, UltraFET功率MOSFET [75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs]
分类和应用:
文件页数/大小: 11 页 / 168 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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HUF75542P3, HUF75542S3S
TM
Data Sheet
June 2000
File Number
4845.2
75A, 80V, 0.014 Ohm, N-Channel,
UltraFET Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.014Ω, V
GS
=
10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
GATE
SOURCE
DRAIN (FLANGE)
HUF75542P3
DRAIN
(FLANGE)
HUF75542S3S
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
75542P
75542S
HUF75542P3
HUF75542S3S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75542S3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUF75542P3, HUF75542S3S
UNITS
V
V
V
A
A
80
80
±20
75
58
Figure 4
Figures 6, 14, 15
230
1.54
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
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Copyright
©
Intersil Corporation 2000
SABER© is a Copyright of Analogy Inc.