RFP45N02L,
RF1S45N02L, RF1S45N02LSM
May 1997
45A, 20V, 0.022 Ohm, N-Channel
Logic Level Power MOSFETs
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are
N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
Formerly developmental type TA49243.
Features
• 45A, 20V
• r
DS(ON)
= 0.022Ω
•
Temperature Compensating
PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
Ordering Information
PART NUMBER
RFP45N02L
RF1S45N02L
RF1S45N02LSM
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
FP45N02L
F45N02L
Symbol
D
G
F45N02L
S
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S45N02LSM9A.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-262AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
A
JEDEC TO-263AB
M
A
A
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
4342
1
INTERSIL [ INTERSIL CORPORATION ]
