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RF1S45N06LESM 参数 Datasheet PDF下载

RF1S45N06LESM图片预览
型号: RF1S45N06LESM
PDF下载: 下载PDF文件 查看货源
内容描述: 45A , 60V , 0.028欧姆,逻辑电平N沟道功率MOSFET [45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 429 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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RFP45N06LE, RF1S45N06LESM
Data Sheet
October 1999
File Number
4076.2
45A, 60V, 0.028 Ohm, Logic Level
N-Channel Power MOSFETs
These are N-Channel enhancement mode power MOSFETs
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49177.
Features
• 45A, 60V
• r
DS(ON)
= 0.028Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFP45N06LE
RF1S45N06LESM
PACKAGE
TO-220AB
TO-263AB
BRAND
FP45N06L
F45N06LE
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel i.e., RF1S45N06LESM9A.
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-263AB
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 407-727-9207
|
Copyright
©
Intersil Corporation 1999.