RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet
October 1999
File Number
4072.3
50A, 60V, 0.022 Ohm, Logic Level
N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49164.
Features
• 50A, 60V
• r
DS(ON)
= 0.022Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFG50N06LE
RFP50N06LE
RF1S50N06LESM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
FG50N06L
FP50N06L
F50N06LE
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S50N06LESM9A.
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
