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RFD3055LESM 参数 Datasheet PDF下载

RFD3055LESM图片预览
型号: RFD3055LESM
PDF下载: 下载PDF文件 查看货源
内容描述: 11A , 60V , 0.107欧姆,逻辑电平, N沟道功率MOSFET [11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 89 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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RFD3055LE, RFD3055LESM, RFP3055LE
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
0
125
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
175
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
10
V
GS
= 4.5V
Unless Otherwise Specified
15
5
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
THERMAL IMPEDANCE
Z
θJC
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
SINGLE PULSE
0.01
10
-5
10
-4
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
100
200
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
I
D
, DRAIN CURRENT (A)
I
DM
, PEAK CURRENT (A)
100
10
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED T
C
= 25
o
C
1ms
10ms
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
200
10
10
-5
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
6-3