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RFD8P05 参数 Datasheet PDF下载

RFD8P05图片预览
型号: RFD8P05
PDF下载: 下载PDF文件 查看货源
内容描述: 8A , 50V , 0.300欧姆,P沟道功率MOSFET [8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关脉冲
文件页数/大小: 6 页 / 55 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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RFD8P05, RFD8P05SM, RFP8P05
Data Sheet
July 1999
File Number
2384.2
8A, 50V, 0.300 Ohm, P-Channel Power
MOSFETs
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09832.
Features
• 8A, 50V
• r
DS(ON)
= 0.300Ω
• UIS SOA Rating Curve
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFD8P05
RFD8P05SM
RFP8P05
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
D8P05
D8P05
RFP8P05
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.,
RFD8P05SM9A.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
4-112
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
©
Intersil Corporation 1999.