RFG75N05E
Data Sheet
July 1999
File Number
2275.5
75A, 50V, 0.008 Ohm, N-Channel Power
MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09821.
Features
• 75A, 50V
• r
DS(ON)
= 0.008Ω
• Electrostatic Discharge Rated
• UIS Rating Curve (Single Pulse)
• 175
o
C Operating Temperature
• Temperature Compensated PSPICE
®
Model Provided
Symbol
D
Ordering Information
PART NUMBER
RFG75N05E
PACKAGE
TO-247
BRAND
RFG75N05E
G
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
4-481
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
