RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel
Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power
field effect transistor specifically designed for use with logic
level (5V) driving sources in applications such as program-
mable controllers, automotive switching, and solenoid driv-
ers. This performance is accomplished through a special
gate oxide design which provides full rated conduction at
gate biases in the 3V to 5V range, thereby facilitating true
on-off power control directly from logic circuit supply volt-
ages.
Formerly developmental type TA09524.
Features
• 1A, 100V
• r
DS(ON)
= 1.200Ω
Ordering Information
PART NUMBER
RFL1N10L
PACKAGE
TO-205AF
BRAND
RFL1N10L
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
©
Intersil Corporation 1999
File Number
1510.3
1
INTERSIL [ INTERSIL CORPORATION ]
