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RFP15P05 参数 Datasheet PDF下载

RFP15P05图片预览
型号: RFP15P05
PDF下载: 下载PDF文件 查看货源
内容描述: 15A , 50V , 0.150欧姆,P沟道功率MOSFET [15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs]
分类和应用: 晶体晶体管开关局域网
文件页数/大小: 8 页 / 91 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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RFD15P05, RFD15P05SM, RFP15P05
Typical Performance Curves
-50
STARTING T
J
= 150
o
C
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
-30
V
GS
= -20V
-20
V
GS
= -7V
(Continued)
-40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= -10V
V
GS
= -8V
-10
V
GS
= -6V
-10
V
GS
= -4.5V
0
V
GS
= -5V
-1
0.1
If R = 0
t
AV
= (L) (I
AS
) / (1.3RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
0
-1.5
-3.0
-4.5
-6.0
-7.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
-40
-55
o
C
25
o
C
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
V
DD
= -15V
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -15A
-32
2.0
-24
175
o
C
-16
1.5
1.0
-8
0.5
0
0
-2
-4
-6
-8
-10
0
-80
-40
0
40
80
120
160
200
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
V
GS
= V
DS
I
D
= -250µA
THRESHOLD VOLTAGE
NORMALIZED GATE
1.5
2.0
I
D
= -250µA
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120
160
200
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-99