RFG30P05, RFP30P05, RF1S30P05SM
Data Sheet
July 1999
File Number
2436.4
30A, 50V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be
operated directly from integrated circuits.
Formerly developmental type TA09834.
Features
• 30A, 50V
• r
DS(ON)
= 0.065Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFG30P05
RFP30P05
RF1S30P05SM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
RFG30P05
RFP30P05
F1S30P05
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A.
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
4-126
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
