RFG40N10, RFP40N10, RF1S40N10SM
Data Sheet
July 1999
File Number
2431.3
40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA9846
Features
• 40A, 100V
• r
DS(ON)
= 0.040Ω
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
RFG40N10
RFP40N10
RF1S40N10SM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
RFG40N10
RFP40N10
G
S
F1S40N10
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
4-450
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
