RFG45N06, RFP45N06, RF1S45N06SM
Data Sheet
July 1999
File Number
3574.4
45A, 60V, 0.028 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA49028.
Features
• 45A, 60V
• r
DS(ON)
= 0.028Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
DRAIN
Ordering Information
PART NUMBER
RFG45N06
RFP45N06
RF1S45N06SM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
RFG45N06
RFP45N06
F1S45N06
GATE
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.
RF1S45N06SM9A.
SOURCE
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
4-455
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
