RFP70N03, RF1S70N03SM
Data Sheet
July 1999
File Number
3404.4
70A, 30V, 0.010 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49025.
Features
• 70A, 30V
• r
DS(ON)
= 0.010Ω
• Temperature Compensating PSPICE
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175
o
C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
RFP70N03
RF1S70N03SM
PACKAGE
TO-220AB
TO-263AB
BRAND
RFP70N03
F1S70N03
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
(FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
INTERSIL [ INTERSIL CORPORATION ]
