IPS4008-xxU
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
Symbol
I
GT
V
D
= 6V R
L
= 100Ω
V
GT
V
D
=V
DRM,
R
L
=3.3KΩ, R
GK
= 1KΩ
Tj = 110
℃
I
G =
1mA R
GK
= 1KΩ
I
T
= 50mA R
GK
= 1KΩ
I
T
= 1A t p = 380uS Tj = 25
℃
V
D
= 67% V
DRM
R
GK
= 1KΩ Tj = 110
℃
V
D
= V
DRM
R
GK
= 1KΩ Tj = 25
℃
I
DRM
V
D
= V
DRM
R
GK
= 1KΩ Tj = 110
℃
V
R
= V
RRM
R
GK
= 1KΩ Tj = 25
℃
I
RRM
V
D
= V
RRM
R
GK
= 1KΩ Tj = 110
℃
TYP
MAX
MIN
MAX
MAX
TYP
MAX
MIN
MAX
MAX
MAX
MAX
0.6
0.8
0.2
6
5
1.3
1.7
10
5
0.1
5
0.1
V
Test Condition
03
MIN
MAX
10
30
IPS4008-xxU
05
20
50
06
30
60
08
50
80
Unit
uA
V
GD
I
L
I
H
V
TM
dV/dt
V
mA
mA
V/us
V/us
uA
mA
uA
mA
Please ask the IGT values to our sales if you want to get another values
.
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case
TO-92
Value
75
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPS [ IP SEMICONDUCTOR CO., LTD. ]
