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IPS808-05I 参数 Datasheet PDF下载

IPS808-05I图片预览
型号: IPS808-05I
PDF下载: 下载PDF文件 查看货源
内容描述: 高灵敏度触发水平 [High sensitive triggering levels]
分类和应用:
文件页数/大小: 4 页 / 288 K
品牌: IPS [ IP SEMICONDUCTOR CO., LTD. ]
 浏览型号IPS808-05I的Datasheet PDF文件第1页浏览型号IPS808-05I的Datasheet PDF文件第3页浏览型号IPS808-05I的Datasheet PDF文件第4页  
IPS808-xxI
ELECTRICAL CHARACTERISTICS
(Tj = 25
unless otherwise specified)
IPS808-xxI
Symbol
Test Condition
05
Unit
I
GT
V
D
= 6V R
L
= 140Ω
V
GT
V
D
=V
DRM,
R
L
=3.3KΩ, R
GK
= 220Ω
Tj = 125℃
I
G =
1mA R
GK
= 1KΩ
I
T
= 50mA R
GK
= 1KΩ
I
T
= 16A tp = 380uS Tj = 25
V
D
= 65% V
DRM
R
GK
= 220Ω Tj = 125℃
V
DRM
I
DRM
V
DRM
R
GK
=
V
RRM
R
GK
=
=
V
RRM
R
GK
=
MIN
MAX
MAX
20
100
0.8
uA
V
V
GD
MIN
0.1
V
I
L
I
H
V
TM
dV/dt
MAX
MAX
MAX
MIN
MAX
MAX
6
5
1.6
5
5
1
6 ~ 35
mA
mA
V
V/us
uA
mA
KΩ
220Ω Tj = 25℃
220Ω Tj = 125℃
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case(DC)
TO-251
Value
20
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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